Electrical properties of ceria-doped yttria

Journal Article · Thu Feb 28 23:00:00 EST 1991 · Journal of the American Ceramic Society; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1991.tb04066.x· OSTI ID:5160719

Marques, F M.B. ^[1]; Wirtz, G P ^[2]

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1. Dept. of Ceramics and Glass Engineering, Univ. of Aveiro, 3800 Aveiro (PT)
2. Dept. of Materials Science and Engineering, Univ. of Illinois, Urbana, IL (US)

This paper reports on the electrical conductivity and ionic domain of several ceria-doped yttria compositions, with up to 10 cation% dopant, studied as a function of temperature (800{degrees} to 1100{degrees}C) and oxygen partial pressure (10{sup {minus}15} to 10{sup 5} Pa). The ionic conduction in ceria-doped yttria involves the transport of interstitial oxygen ion defects. The increase of electronic conductivity under reducing conditions with increasing dopant concentration suggests hopping of small polarons between cerium ions with different valences as the dominant conduction mechanism.

• OSTI ID: 5160719
• Journal Information: Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 74:3; ISSN JACTA; ISSN 0002-7820
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
INTERSTITIALS
IONS
MATERIALS
OXYGEN IONS
PHYSICAL PROPERTIES
POINT DEFECTS
POLARONS
PRESSURE DEPENDENCE
QUASI PARTICLES
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS
VALENCE
YTTRIUM COMPOUNDS