Effects of rare earth incorporation on the ferroelectric and dielectric properties of sol-gel derived PbTiO{sub 3} films

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:51576

Teowee, G; Baertlein, C D; Schlegel, S A ^[1]; Boulton, J M; Uhlmann, D R ^[2]

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1. Donnelly Corp., Tucson, AZ (United States)
2. Univ. of Arizona, Tucson, AZ (United States)

Ferroelectric (FE) films, especially PZT films, have received increasing attention for microelectronics applications such as FE memory and in high density DRAM`S. While rare earth doped PbTiO{sub 3} ceramics have been studied for SAW and piezoelectric applications, rare earth doped films seldom have been systematically explored. A series of sol-gel derived PbTiO{sub 3} films with varying amounts (5--15 mole %) of rare earths (such as, Nd, Sm, Tb, Dy, Er Yb and La) have been prepared using acetates and alkoxides as precursors. The solutions were spin coated onto platinized Si wafers. The effects of the type and amount of rare incorporation on the phase assembly and microstructure have been quantified. The results of dielectric characterization (e.g., dielectric constant, dissipation factor and leakage currents) and FE behaviors (viz.remanent polarization, and coercive field) are presented these films exhibited low leakage currents (3E-10 A/cm{sup 2}) and much higher dielectric constant (up to 525) compared to undoped PbTiO{sub 3} films.

• OSTI ID: 51576
• Report Number(s): CONF-940411--; ISBN 1-55899-246-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC PROPERTIES
DIFFERENTIAL THERMAL ANALYSIS
DOPED MATERIALS
LEAD COMPOUNDS
MICROSTRUCTURE
RARE EARTHS
SILICON
SPIN-ON COATING
SPIN-ON COATINGS
THERMAL GRAVIMETRIC ANALYSIS
THIN FILMS
TITANATES
X-RAY DIFFRACTION