Modification of sol-gel thin films by ion implantation

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:51560

Hirashima, Hiroshi; Adachi, Kenji; Imai, Hiroaki ^[1]

---

1. Keio Univ., Yokohama (Japan). Faculty of Science and Technology

In order to densify and to improve the physical properties, TiO{sub 2} sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar{sup +} or B{sup +} ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar{sup +} implantation. Drying and densification of sol-gel films were enhanced by Ar{sup +} implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B{sup +} implantation. However, IR absorption bands of B-O bond were observed after B{sup +} implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

• OSTI ID: 51560
• Report Number(s): CONF-940411--; ISBN 1-55899-246-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON IONS
BORON IONS
CHEMICAL COMPOSITION
EXPERIMENTAL DATA
HEAT TREATMENTS
ION IMPLANTATION
SILICON
SILICON OXIDES
TITANIUM OXIDES
X-RAY DIFFRACTION