Ion-beam-induced densification of zirconia sol-gel thin films

Journal Article · Sat May 01 04:00:00 EDT 1993 · Journal of the American Ceramic Society; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1993.tb03769.x· OSTI ID:6461285

Levine, T E; Keddie, J L; Revesz, P; Mayer, J W; Giannelis, E P ^[1]

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1. Cornell Univ., Ithaca, NY (United States)

Densification of sol-gel zirconia films was achieved using ion implantation instead of conventional heat treatment. Densification was observed with Xe[sup +]-ion doses as low as 10[sup 14] ions/cm[sup 2]. Ion implantation resulted in hydrogen and carbon losses as measured by forward recoil elastic spectrometry (FRES) and Rutherford backscattering spectrometry (RBS) using [sup 12]C([alpha],[alpha])[sup 12]C resonance, respectively. The density and chemical composition of the highest-dose implanted sol-gel films were comparable with those obtained by high-temperature sintering. The chemical and microstructural modifications in the films were attributed to both electronic interactions and nuclear collisions between the Xe[sup +] ions and the target atoms.

• OSTI ID: 6461285
• Journal Information: Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 76:5; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
DATA
DENSITY
EXPERIMENTAL DATA
FABRICATION
FILMS
HEAT TREATMENTS
INFORMATION
ION BEAMS
ION IMPLANTATION
IONS
MICROSTRUCTURE
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SINTERING
SOL-GEL PROCESS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
XENON IONS
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES