Improved VO sub 2 thin films for infrared switching

Journal Article · Tue Oct 01 04:00:00 EDT 1991 · Applied Optics; (United States)

DOI:https://doi.org/10.1364/AO.30.004119· OSTI ID:5155989

Case, F C ^[1]

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1. LTV Missiles and Electronics Group, P.O. Box 650003, MS WT-50, Dallas, Texas, (USA)

Vanadium dioxide (VO{sub 2}) undergoes a thermally induced phase transition from a semiconductor to a metal near 68 {degree}C. The deposition of VO{sub 2} thin films by using a process of activated-reactive evaporation provides high-quality VO{sub 2}-film materials; specifically, the semiconducting phase-extinction coefficient in the infrared is reduced by an order of magnitude without detrimental effect on the corresponding metal phase coefficient. The materials improvement significantly enhances accessible performance limits for optical switching devices, as compared with VO{sub 2} thin films deposited by both standard reactive and ion-assisted reactive evaporation.

• OSTI ID: 5155989
• Journal Information: Applied Optics; (United States), Journal Name: Applied Optics; (United States) Vol. 30:28; ISSN 0003-6935; ISSN APOPA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
COHERENT SCATTERING
COMPUTERS
DATA
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EQUIPMENT
EXPERIMENTAL DATA
FILMS
INFORMATION
INFRARED RADIATION
LIGHT TRANSMISSION
MATERIALS
MEDIUM TEMPERATURE
NUMERICAL DATA
OPTICAL COMPUTERS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
RADIATIONS
SCATTERING
SEMICONDUCTOR MATERIALS
SWITCHES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS
VANADIUM OXIDES
X-RAY DIFFRACTION