Effect of substrate and growth method on vanadium dioxide thin films by RF magnetron sputtering: Vanadium metal oxidation vs reactive sputtering

Christensen, A.; Posadas, A. B.; Zutter, B.; Finnegan, P.; Bhullar, S.; Bishop, S.; Talin, A. A.; Demkov, A. A.

doi:10.1063/5.0150898

Title: Effect of substrate and growth method on vanadium dioxide thin films by RF magnetron sputtering: Vanadium metal oxidation vs reactive sputtering

Journal Article · Thu Jul 06 00:00:00 EDT 2023 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0150898· OSTI ID:2311609

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Univ. of Texas, Austin, TX (United States)
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Vanadium dioxide (VO₂) undergoes a metal–insulator phase transition at ~70 °C and has attracted substantial interest for potential applications in electronics, including those in neuromorphic computing. The vanadium–oxygen system has a rather complicated phase diagram, and controlling the stoichiometry and the phase of thin films of vanadium oxides is a well-known challenge. Here, we explore the novel combination of two methods of VO₂ thin film deposition using off-axis RF magnetron sputtering on (100)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates: reactive sputtering of vanadium in an oxygen environment and sputtering of vanadium metal followed by oxidation to VO₂. Interestingly, the reactive sputtering process on both substrate orientations yields the metastable semiconducting VO₂ (B) phase, which is structurally stabilized by the YSZ surface. The metal sputtering and oxidation process on YSZ produces mainly the equilibrium monoclinic (or M1) phase of VO₂ that exhibits a metal–insulator transition. Using this method, we obtained thin films of (010)-textured polycrystalline VO₂ (M1) that show a metal–insulator transition with an on/off ratio larger than 1000.

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Research Organization:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); USDOE Laboratory Directed Research and Development (LDRD) Program; US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: NA0003525; FA9550-18-1-0053

OSTI ID:: 2311609

Report Number(s):: SAND-2023-06123J

Journal Information:: Journal of Applied Physics, Vol. 134, Issue 1; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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