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Patterning of epitaxial YBa sub 2 Cu sub 3 O sub x insulator multilayerswith a high-temperature-resistant lift-off mask

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.105913· OSTI ID:5154586
 [1]
  1. SIEMENS AG, Research Laboratories, P.O. Box 3220, D-8520 Erlangen (Germany)
A new process for patterning of YBa{sub 2}Cu{sub 3}O{sub {ital x}}-insulator multilayers is described, using a high-temperature-resistant CaO process mask, which can be evaporated directly onto previously patterned YBa{sub 2}Cu{sub 3}O{sub {ital x}} layers and removed after film deposition. A crossover contact of two 3 {mu}m wide and 30 {mu}m long YBa{sub 2}Cu{sub 3}O{sub {ital x}} striplines has been fabricated by laser deposition, using this patterning technique. The upper and the lower stripline of the crossover contact show {ital T}{sub {ital c}} values of {approx}89 K and a critical current density {ital j}{sub {ital c}} (77 K) of 2 and 4{times}10{sup 6} A/cm{sup 2}, respectively. The contact between the upper and the lower stripline is superconducting below 87 K. At 100 K, the normal conducting contact resistivity is 5{times}10{sup {minus}8} {Omega} cm{sup 2}, based on a contact area of 3{times}3 {mu}m.
OSTI ID:
5154586
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:20; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English