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Title: Metallo-organic solution deposition (MOSD) of transparent, crystalline ferroelectric films

Patent ·
OSTI ID:5154545

This patent describes an improved coating deposition process for transparent, ferroelectric films up to 5 mm thick. It comprises: mixing liquid state metallo-organic starting materials consisting of at least one alkoxide or carboxylic acid salt of the metals selected from a group consisting of barium, strontium, lead, lanthanum or lithium or a from a group consisting of zirconium, titanium or niobium to form a coating solution; spinning, dipping, or spraying the coating solution on the substrate to be coated; drying the coated substance at low temperature in the range of 100-200{degrees}C. in air or a vacuum, thereby removing low boiling solvent molecules; rapidly densifying the coated substrate at moderate temperature (400-600{degrees}C.), thereby forming an amorphous film; repeating the above steps until a desired coating thickness is obtained; and annealing the thus formed film at a temperature in the range 525-800{degrees}C. to obtain a transparent ferroelectric oxide film with a controlled grain size.

Assignee:
Aerospace Corp., El Segundo, CA (USA)
Patent Number(s):
US 4963390; A
Application Number:
PPN: US 7-253538
OSTI ID:
5154545
Resource Relation:
Patent File Date: 5 Oct 1988
Country of Publication:
United States
Language:
English