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Electron--optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells

Journal Article · · Physical Review Letters; (United States)
 [1]; ; ;  [2];  [3]
  1. Department of Physics, Arizona State University, Tempe, Arizona (USA)
  2. Department of Physics, University of California, Berkeley, California (USA) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California (USA)
  3. Coordinated Science Laboratory, University of Illinois, Urbana, Illinois (USA)

Nonequilibrium populations of both confined and interface phonons generated by picosecond laser pulses in a series of GaAs/AlAs quantum wells have been studied by time-resolved picosecond Raman scattering as a function of well width. The dependence of the nonequilibrium phonon populations on well width is found to be sensitive to the theoretical model which is used to describe the electron-phonon interaction. Our data disagree with the macroscopic model of electron-phonon interaction, but they are in excellent agreement with the microscopic model proposed recently by Huang and Zhu.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
5153940
Journal Information:
Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 67:18; ISSN PRLTA; ISSN 0031-9007
Country of Publication:
United States
Language:
English