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Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings

Conference ·
OSTI ID:10135002
; ;

The generation of a nonequilibrium population of optical phonons by photoexcited hot electrons in semiconductor quantum wells is investigated theoretically. The microscopic model of electron-phonon interaction proposed by Huang and Zhu has been used to compute the distributions of confined longitudinal optical phonons and interface modes in GaAs/AlAs quantum wells as a function of well width. Experimental tests of the calculated distributions by Raman scattering are discussed.

Research Organization:
Lawrence Berkeley Lab., CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
10135002
Report Number(s):
LBL--31481; CONF-9106105--1; ON: DE92010264
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360606
665400
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ELECTRON-PHONON COUPLING
GALLIUM ARSENIDES
HAMILTONIAN FUNCTION
PHONONS
PHYSICAL PROPERTIES
POTENTIALS
QUANTUM PHYSICS ASPECTS OF CONDENSED MATTER
SEMICONDUCTOR MATERIALS
SOLID STATE PHYSICS