Josephson properties of Nb/sub 3/Ge/oxide/Pb tunnel junctions

Journal Article · Thu Mar 01 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94802· OSTI ID:5151721

Tanabe, K; Asano, H; Michikami, O

Nb/sub 3/Ge/oxide/Pb Josephson tunnel junctions have been fabricated on magnetron-sputtered Nb/sub 3/Ge thin films using standard photolithography and a CF/sub 4/ plasma cleaning technique. Their Josephson properties have also been investigated. High-quality junctions with a well-defined large gap (approx.5 mV) and low excess conductance (V/sub m/ = 35 mV) can be obtained by adopting large-grained high-T/sub c/ films. These junctions are found to have an Nb/sub 3/Ge magnetic penetration depth of less than 200 nm, and a specific capacitance a little lower than that for Nb/Nb oxide/Pb junctions.

• Research Organization: Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki 319-11, Japan
• OSTI ID: 5151721
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
ENERGY GAP
EQUIPMENT
FABRICATION
FILMS
GERMANIUM COMPOUNDS
JOSEPHSON JUNCTIONS
JUNCTIONS
LEAD
MAGNETRONS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NIOBIUM COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PENETRATION DEPTH
PHYSICAL PROPERTIES
SPUTTERING
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT