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Studies on silicon-based CdS and ZnS hybrid systems for the utility of these films in solar cells

Journal Article · · J. Vac. Sci. Technol.; (United States)
DOI:https://doi.org/10.1116/1.571813· OSTI ID:5148152
Sputtered CdS/Si and (Zn/sub x/--Cd/sub 1-x/)S/Si heterojunctions have been investigated. After high- temperature annealing (> or =600 /sup 0/C) of (Zn/sub x/--Cd/sub 1-x/)S films for long periods (> or =1 h) the values obtained for the electrical resistivity rho, electron mobility, carrier concentration, and grain size were 15 ohm cm, 80 cm/sup 2//V-sec, 8 x 10/sup 16/ cm/sup -3/ 2200 A, respectively. These are in the range of values required for efficient (7.5%) solar cell heterojunctions. The effect of sulfur diffusion into Si on the cell performance is discussed.
Research Organization:
Physics Department, University of Riyadh, P. O. Box 2455, Riyadh, Saudi Arabia
OSTI ID:
5148152
Journal Information:
J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 21:2; ISSN JVSTA
Country of Publication:
United States
Language:
English