Process for preparing refractory borides and carbides
A method is described for the preparation of a refractory boride or carbide which comprises contacting a metal chloride. The metal chloride undergoes reduction on reaction with an alkali metal, or silicon tetrachloride with boron trichloride or carbon tetrachloride in a solvent unreactive with the alkali metal and the chlorides in the presence of an alkali metal. The metal chloride or silicon tetrachloride and the boron trichloride or carbon tetrachloride are present in an amount about stoichiometrically equivalent to the boride or carbide to be prepared. Alkali metal is present in an amount about stoichiometrically equivalent to the amount of chloride in the metal chloride or silicon tetrachloride and the boron trichloride or carbon tetrachloride, until the aforesaid chlorides present have reacted with the alkali metal to form alkali metal chloride, separating the solvent to leave a solid residue containing a metal boride, silicon carbide or metal carbide precursor together with the alkali metal chloride. The residue is heated at about 700/sup 0/-900/sup 0/C. while separating the alkali metal chloride until the precursor is converted to the refractory boride or carbide.
- Assignee:
- Secretary of Commerce, Washington, DC
- Patent Number(s):
- US 4606902
- OSTI ID:
- 5144631
- Country of Publication:
- United States
- Language:
- English
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OBTAINING ZIRCONIUM BORIDE
Boron diffusion in silicon from metal boride sources
Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALI METAL COMPOUNDS
BORIDES
BORON CHLORIDES
BORON COMPOUNDS
CARBIDES
CARBON COMPOUNDS
CHEMICAL PREPARATION
CHLORIDES
CHLORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HIGH TEMPERATURE
QUANTITY RATIO
REFRACTORIES
SILICON CHLORIDES
SILICON COMPOUNDS
SOLVENTS
STOICHIOMETRY
SYNTHESIS
VERY HIGH TEMPERATURE