Interaction between implanted ions and intrinsic defects in silica
- Belmont Coll., Nashville, TN (USA).
- Vanderbilt Univ., Nashville, TN (USA)
- Oak Ridge National Lab., TN (USA)
High purity silica (Spectrosil) samples were implanted with Ti, Cr, Mn, Fe and Cu at doses ranging from 1.0 to 5.0 {times} 10{sup 15} ions/cm{sup 2} at 160 keV and 2.6 {mu}A/cm{sup 2}. The optical absorption extinction coefficients per ion were measured from 1.8 to 6.0 eV. In all samples there was an increase in absorption over the unimplanted sample at energies {ge}4.6 eV. The increase in absorption at 5.1 eV and 5.7 eV is attributed to B{sub 2}(E{double prime}) centers and E{prime} centers respectively. The relative values of the extinction coefficients of these bands are attributed to the relative oxygen activities of the TMI relative to the SiO{sub 2} host substrate. 13 refs., 4 figs., 2 tabs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- DOE/ER; NSF
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5124096
- Report Number(s):
- CONF-891119-91; ON: DE90006569; CNN: DMR-8513731
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
CHALCOGENIDES
CHARGED PARTICLES
CHROMIUM IONS
COPPER IONS
DEFECTS
ENERGY
FREE ENERGY
ION IMPLANTATION
IONS
IRON IONS
MANGANESE IONS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SILICON COMPOUNDS
SILICON OXIDES
THERMODYNAMIC PROPERTIES
TITANIUM IONS