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Two-dimensional structural modulation in epitaxial CaF[sub 2] overlayers on Si(111)

Journal Article · · Physical Review Letters; (United States)
; ; ;  [1]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States) Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States) Max-Planck-Institut, D-7000 Stuttgart 80 (Germany) AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
Using high-resolution x-ray diffraction a CaF[sub 2] thin film epitaxially grown on a Si(111) substrate is found to exhibit an incommensurately modulated structure parallel to the heterointerface. The overlayer consists of a triangular network of discommensurations, separating regions with two different site occupations of the interfacial Ca, [ital H]3 and [ital T]4. The two-dimensional spatial modulation of the overlayer is induced by the competition between the strong atomic bonding to the substrate and the bonding in the film. Remarkably, the in-plane periodic lattice distortion generated at the interface propagates many atomic layers through the CaF[sub 2] film.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
DOE Contract Number:
W-31109-ENG-38; AC02-76CH00016
OSTI ID:
5112667
Journal Information:
Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 72:15; ISSN 0031-9007; ISSN PRLTAO
Country of Publication:
United States
Language:
English