Ir-spectroscopy of impurity complexes in germanium
A large number of impurity complexes which create shallow levels, have been discovered in pure and doped germanium single crystals. The structure and the composition of several of these complexes have been determined using far infrared spectroscopy and information about crystal growth related residual impurities. In general, the complexes consist of a heavy substitutional impurity binding one or more light, interstitial impurities such as hydrogen or lithium. The coupling between the tunneling motion of the interstitial component and the electronic structure of the complexes can create complicated groundstate manifolds which contain stress insensitive components. Spectroscopy further shows that multivalent centers, such as double or triple acceptors, become hydrogenic complexes upon binding one or two hydrogen atoms, respectively. Neutralization of shallow acceptors in silicon, which has recently attracted attention, appears to be the same phenomenon as the valancy reduction of multiple acceptors in germanium. 40 refs., 10 figs.
- Research Organization:
- California Univ., Berkeley (USA); Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5111398
- Report Number(s):
- LBL-21955; CONF-860782-1; ON: DE87000317
- Country of Publication:
- United States
- Language:
- English
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