Recombination processes in quantum well lasers with superlattice barriers

Journal Article · Mon Dec 04 00:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102023· OSTI ID:5107955

Blood, P; Fletcher, E D; Foxon, C T; Griffiths, K ^[1]

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1. Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England (GB)

Spontaneous emission spectra from GaAs quantum well lasers grown by molecular beam epitaxy show that the radiative recombination rate in (AlAs)(GaAs) superlattice barriers is greater than in alloy barriers of the same average composition ({ital x}=0.25) due to reduction in effective gap by superlattice effects. Measurements of emission spectra as functions of temperature show that these radiative processes account for a significant part of the temperature variation of the threshold current and we estimate that the nonradiative lifetime in the superlattice barriers is an order of magnitude longer than in alloy barriers grown under similar conditions.

• OSTI ID: 5107955
• Journal Information: Applied Physics Letters; (USA), Vol. 55:23; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
SUPERLATTICES
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
RECOMBINATION
ENERGY GAP
EXPERIMENTAL DATA
FABRICATION
LUMINESCENCE
MOLECULAR BEAM EPITAXY
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)