Some properties of RF sputtered Al sub 2 O sub 3 -Ta sub 2 O sub 5 composite thin films

Journal Article · Sun Dec 01 04:00:00 EST 1991 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2085483· OSTI ID:5101450

Nomura, K; Ogawa, H ^[1]

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1. Matsushita Electric Industrial Co., Ltd., Central Research Lab., Moriguchi, Osaka 570 (JP)

Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} composite dielectric thin films were prepared by RF plasma sputtering under various preparation conditions. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used to investigate the impurities and the oxygen vacancies in the films. The main impurity of the film was Na, but the sodium can be reduced by the use of high purity (5N) Al-Ta metal target. Oxygen vacancies were mainly related to Ta atoms and were dependent on the deposition rate of the films. Films sputtered at around 50 {Angstrom}/min were found to be relatively good for thin film devices, i.e., they have a high dielectric constant ({epsilon}{sub r}: {approximately}19), a low leakage current ({approximately}30 mA/F, at 10 V), and fewer oxygen vacancies. In this paper the preparation, details of the structure, and some electrical properties of the Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} composite dielectric thin films are described.

• OSTI ID: 5101450
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 138:12; ISSN JESOA; ISSN 0013-4651
• Country of Publication: United States
• Language: English

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SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
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