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The size effect of ion charge tracks on single event multiple-bit upset

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:5098517
Double-bit upset rates in satellite memory cells as high as several percent of total upsets have recently been reported. This significant fraction may be explained by cosmic ion track sizes which are larger than previously postulated. Generation and transport of high-energy secondary electrons along heavy-ion tracks have been analyzed using the Monte Carlo (MC) code TRIPOS-E. Indications are that initial track radii are significantly large than previously thought. In this paper, an evaluation of the probability of double-bit upsets as a function of track size and hypothetical device dimensions is presented.
Research Organization:
Mechanical, Aerospace and Nuclear Engineering Dept., Univ. of California, Los Angeles, CA 90024 (US)
OSTI ID:
5098517
Report Number(s):
CONF-8707112-
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
Country of Publication:
United States
Language:
English

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