Modeling of sputtering and redeposition in focused-ion-beam trench milling

Journal Article · Fri Nov 01 04:00:00 EST 1991 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.577177· OSTI ID:5097675

Ishitani, T; Ohnishi, T ^[1]

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1. Central Research Laboratory, Hitachi, Ltd., Kokubunji (Tokyo 185 Japan)

Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of {theta}{sub 0} is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of {theta}{sub 0} for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.

• OSTI ID: 5097675
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 9:6; ISSN 0734-2101; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
INCIDENCE ANGLE
ION BEAMS
MATHEMATICAL MODELS
SPUTTERING
STEADY-STATE CONDITIONS
SURFACES