Blistering effects in argon-bombarded silicon
Journal Article
·
· Appl. Phys. Lett.; (United States)
Blistering of silicon due to argon bombardment has been observed at implantation energies above about 100 keV. Above about 200 keV rupture of blisters becomes the predominant surface damage phenomenon. Blistering effects are most obvious upon first appearance. Further bombardment causes the occurrence of new generations of blisters accompanied by oscillations in argon content of the silicon backing. The effects are interpreted in terms of argon agglomeration, build-up of critical argon pressures, argon release from near-surface regions, and sputtering.
- Research Organization:
- Gesellschaft fuer Strahlen- und Umweltforschung mbH, Physikalisch-Technische Abteilung, D-8042 Neuherberg, Federal Republic of Germany
- OSTI ID:
- 5095091
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:9; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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