Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiation

Journal Article · Sat Apr 15 04:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90109· OSTI ID:5095084

Celler, G K; Poate, J M; Kimerling, L C

We demonstrate the unique capability of a repetitively pulsed laser to ''write'' a monocrystalline pattern in ion-implanted amorphous silicon layers. Ion-channeling data, from the samples scanned with a focused beam of a Q-switched Nd : YAG laser, show a continuity of the single-crystal layer produced with spatially overlapping laser pulses, at 60-80 MW cm/sup -2/. Scattering yields indicate very high substitutionality of the implanted ions and an interdependence between the laser power density and the depth redistribution of the implants. Finally, similar recrystallization was obtained with a CO/sub 2/ laser at 10.6 ..mu..m

• Research Organization: Western Electric Engineering Research Center, Princeton, New Jersey 08540
• OSTI ID: 5095084
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANTIMONY IONS
ARSENIC IONS
ATOMIC IONS
CARBON DIOXIDE LASERS
CHANNELING
CHARGED PARTICLES
CRYSTAL GROWTH
CRYSTALS
DEPTH DOSE DISTRIBUTIONS
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
GAS LASERS
ION CHANNELING
ION IMPLANTATION
IONS
LASER RADIATION
LASERS
MONOCRYSTALS
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RADIATIONS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SOLID STATE LASERS
SPATIAL DOSE DISTRIBUTIONS