Pulsed laser deposition of conductive SrRuO{sub 3} thin films

Journal Article · Thu May 01 04:00:00 EDT 1997 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.580433· OSTI ID:509002

Jia, Q X; Foltyn, S R; Hawley, M; Wu, X D ^[1]

---

1. Materials Science and Technology Division, G755, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

In this article we describe the pulsed laser deposition of smooth, particulate-free, and high conductivity SrRuO{sub 3}, which are well suited for use as bottom electrodes in high capacity integrated thin-film capacitors. The films were heteroepitaxially grown on (100) LaAlO{sub 3} substrates at temperatures above 650{degree}C. Scanning tunneling microscopy measurements revealed that higher deposition temperatures produced larger grain sizes, and it was found from x-ray diffraction and four-probe tests that higher temperatures also led to improved film crystallinity and conductivity, respectively. At a deposition temperature of 775{degree}C, the room-temperature resistivity of SrRuO{sub 3} films was 280 {mu}{Omega}cm, and the residual resistivity ratio was 8.4, making these materials excellent candidates for use as thin-film electrodes. {copyright} {ital 1997 American Vacuum Society.}

• OSTI ID: 509002
• Report Number(s): CONF-961002--
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 15; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRODES
EPITAXY
GRAIN SIZE
LANL
LASER RADIATION
RUTHENIUM OXIDES
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
THIN FILMS
X-RAY DIFFRACTION