Microstructures and electrical properties of SrRuO{sub 3} thin films on LaAlO{sub 3} substrates
- Los Alamos National Lab., NM (United States)
Conductive SrRuO{sub 3} thin films have been deposited using pulsed laser deposition on LaAlO{sub 3} substrates at different substrate temperatures. Structural and microstructural properties of the SrRuO{sub 3}/LaAlO{sub 3} system have been studied using x-ray diffraction, scanning electron microscopy, and scanning tunneling microscopy. Electrical properties of SrRuO{sub 3} thin films have been measured. It was found that the film deposited at 250{degree}C is amorphous, showing semiconductor-like temperature dependence of electrical conductivity. The film deposited at 425{degree}C is crystalline with very fine grain size (100-200 A), showing both metallic and semiconductor-like temperature dependence of electrical conductivity in different temperature regions. The film deposited at 775{degree}C shows a resistivity of 280 {mu}{Omega}.cm at room temperature and a residual resistivity ratio of 8.4. Optimized deposition conditions to grow SrRuO{sub 3} thin films on LaAlO{sub 3} substrates have been found. Possible engineering applications of SrRuO{sub 3} thin films deposited at different temperatures are discussed. Bulk and surface electronic structures of SrRuO{sub 3} are calculated using a semi-empirical valence electron linear combination of atomic orbitals approach. The theoretical calculation results are employed to understand the electrical properties of SrRuO{sub 3} thin films. 13 refs., 8 figs.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 420696
- Report Number(s):
- CONF-960202--
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 11 Vol. 25; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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