Improvement of leakage currents of Pt/(Ba,Sr)TiO{sub 3}/Pt capacitors
- Process Group, Advanced Technology Laboratory, LG Semicon, Cheongju (Korea)
Pt/(Ba,Sr)TiO{sub 3}/Pt capacitors fabricated by sputtering technique showed abnormally higher leakage current when negative bias was applied to the top electrode. In this letter, two kinds of processes were attempted to reduce high leakage current of Pt/BST/Pt capacitors for dynamic random access memory devices: (1) postannealing under O{sub 2} atmosphere and (2) adding oxygen into sputtering gas of platinum top electrode. These processes were very effective to reduce the oxygen vacancy in the BST films which are mostly responsible for such a high leakage current. The higher reverse currents were significantly lowered by these processes, so that we could obtain symmetric current versus voltage curves of Pt/BST/Pt capacitors. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 508934
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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