Effectiveness of SiO/sub 2/ for preventing silicon -metal reactions at high temperatures

Journal Article · Wed Oct 01 00:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327456· OSTI ID:5069601

Bevolo, A J; Campisi, G J; Shanks, H R; Schmidt, F A

Silicon dioxide layers, deposited by rf sputtering and measuring less than 1000 A thick, were found to prevent silicide formation between evaporated silicon films and molybdenum substrates after annealing for 1 h at 1250 /sup 0/C. Silicon grain size ranged from 0.2 to 2.5 ..mu.. in cross section. In situ Auger electron spectroscopy (AES) was used in the silicon deposition chamber to monitor the heat treated Si/SiO/sub 2//Mo samples for silicide formation. Composition depth profiling by ion beam sputtering and AES analysis was used to measure oxygen diffusion into the silicon and metal phases. This technique established that the breakdown of SiO/sub 2/ as a reaction barrier between the molybdenum and silicon occurred because of oxygen diffusion from the SiO/sub 2/ layer into the silicon. A similar behavior is expected between SiO/sub 2/ and tungsten. However, when SiO/sub 2/, deposited on tantalum, was heated to 1100 /sup 0/C, the oxygen was found to have migrated into the metal resulting in the breakdown of the oxide layer.

• Research Organization: Ames Laboratory, Iowa State University, Ames, Iowa 50011
• DOE Contract Number: WPAS-KC-02-01-01; WPAS-KC-02-02-02
• OSTI ID: 5069601
• Journal Information: J. Appl. Phys.; (United States), Vol. 51:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
METALS
CHEMICAL REACTIONS
SILICON
AUGER ELECTRON SPECTROSCOPY
SPUTTERING
ANNEALING
DIFFUSION
EXPERIMENTAL DATA
GRAIN SIZE
HEAT TREATMENTS
ION BEAMS
LAYERS
MOLYBDENUM
OXYGEN
SILICIDES
SILICON OXIDES
SPATIAL DISTRIBUTION
SUBSTRATES
THICKNESS
VERY HIGH TEMPERATURE
BEAMS
CHALCOGENIDES
CRYSTAL STRUCTURE
DATA
DIMENSIONS
DISTRIBUTION
ELECTRON SPECTROSCOPY
ELEMENTS
INFORMATION
MICROSTRUCTURE
NONMETALS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
REFRACTORY METALS
SEMIMETALS
SILICON COMPOUNDS
SIZE
SPECTROSCOPY
TRANSITION ELEMENTS
360603* - Materials- Properties