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Critical-current enhancement in particle-irradiated cuprate semiconductors

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.105915· OSTI ID:5057216
; ; ;  [1]; ; ; ;  [2]
  1. Naval Research Laboratory, Code 4615, Washington, DC, (USA)
  2. Superconductor Technologies, Inc., 460 Ward Drive, Santa Barbara, California, (USA)

Detailed measurements have been made of the magnetic field (0{lt}{ital H}{lt}6 {ital T}) and temperature (10 K{lt}{ital T}{lt}100 K) dependencies of the critical current density {ital j}{sub {ital c}} in Tl{sub 2}CaBa{sub 2}Cu{sub 2}O{sub 8} films before and after irradiation with incremental fluences (0{lt}{Phi}{lt}3{times}10{sup 16} cm{sup {minus}2}) of 2 MeV protons. The results are interpreted quantitatively in terms of radiation-induced changes in (1) the critical temperature, (2) the rate of thermal flux creep, and (3) local scale superconductivity. Radiation-induced enhancements in {ital j}{sub {ital c}} are described by an expression which allows the fluence that maximizes {ital j}{sub {ital c}} to be predicted as a function of {ital H}, {ital T}, pinning energy, and particle type.

OSTI ID:
5057216
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:20; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English