Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers

Journal Article · Fri Feb 01 00:00:00 EST 1991 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.76856· OSTI ID:5047889

Lee, Y H; Tell, B; Goebeler, K F.B. ^[1]; Leibenguth, R E; Mattera, V D ^[2]

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1. AT and T Bell Lab., Holmdel, NJ (US)
2. AT and T Bell Lab., Breinigsville, PA (US)

Deep-red (770 nm) top-surface-emitting vertical-cavity Al-GaAs lasers are fabricated and operated continuously at room temperature. An Al{sub 0.14}Ga{sub 0.86}As superlattice is used or an active-gain medium. Efficient current funneling is achieved by deep proton implantation. CW threshold currents are 4.6 and 6.3 mA at 3.9 and 3.4 V bias for 10 and 15 {mu}m diameter lasers, respectively. The maximum CW output power is {gt}1.1 mW at room temperature without heatsink.

• OSTI ID: 5047889
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 3:2, Issue 2; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
ALUMINIUM ARSENIDES
EFFICIENCY
GALLIUM ARSENIDES
ION IMPLANTATION
LASER CAVITIES
MEDIUM TEMPERATURE
OPERATION
STIMULATED EMISSION
SUPERLATTICES
THRESHOLD ENERGY
VISIBLE RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)