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Title: Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers

Abstract

Deep-red (770 nm) top-surface-emitting vertical-cavity Al-GaAs lasers are fabricated and operated continuously at room temperature. An Al{sub 0.14}Ga{sub 0.86}As superlattice is used or an active-gain medium. Efficient current funneling is achieved by deep proton implantation. CW threshold currents are 4.6 and 6.3 mA at 3.9 and 3.4 V bias for 10 and 15 {mu}m diameter lasers, respectively. The maximum CW output power is {gt}1.1 mW at room temperature without heatsink.

Authors:
; ;  [1]; ;  [2]
  1. AT and T Bell Lab., Holmdel, NJ (US)
  2. AT and T Bell Lab., Breinigsville, PA (US)
Publication Date:
OSTI Identifier:
5047889
Resource Type:
Journal Article
Journal Name:
IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
Additional Journal Information:
Journal Volume: 3:2; Journal Issue: 2; Journal ID: ISSN 1041-1135
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; FABRICATION; ALUMINIUM ARSENIDES; EFFICIENCY; GALLIUM ARSENIDES; ION IMPLANTATION; LASER CAVITIES; MEDIUM TEMPERATURE; OPERATION; STIMULATED EMISSION; SUPERLATTICES; THRESHOLD ENERGY; VISIBLE RADIATION; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; LASERS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Lee, Y H, Tell, B, Goebeler, K F.B., Leibenguth, R E, and Mattera, V D. Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers. United States: N. p., 1991. Web. doi:10.1109/68.76856.
Lee, Y H, Tell, B, Goebeler, K F.B., Leibenguth, R E, & Mattera, V D. Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers. United States. doi:10.1109/68.76856.
Lee, Y H, Tell, B, Goebeler, K F.B., Leibenguth, R E, and Mattera, V D. Fri . "Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers". United States. doi:10.1109/68.76856.
@article{osti_5047889,
title = {Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers},
author = {Lee, Y H and Tell, B and Goebeler, K F.B. and Leibenguth, R E and Mattera, V D},
abstractNote = {Deep-red (770 nm) top-surface-emitting vertical-cavity Al-GaAs lasers are fabricated and operated continuously at room temperature. An Al{sub 0.14}Ga{sub 0.86}As superlattice is used or an active-gain medium. Efficient current funneling is achieved by deep proton implantation. CW threshold currents are 4.6 and 6.3 mA at 3.9 and 3.4 V bias for 10 and 15 {mu}m diameter lasers, respectively. The maximum CW output power is {gt}1.1 mW at room temperature without heatsink.},
doi = {10.1109/68.76856},
journal = {IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)},
issn = {1041-1135},
number = 2,
volume = 3:2,
place = {United States},
year = {1991},
month = {2}
}