Radiation-hardened CMOS/SOI development status
Conference
·
· Trans. Am. Nucl. Soc.; (United States)
OSTI ID:5040856
None
- Research Organization:
- Naval Research Lab., Washington, DC
- OSTI ID:
- 5040856
- Report Number(s):
- CONF-850610-
- Conference Information:
- Journal Name: Trans. Am. Nucl. Soc.; (United States) Journal Volume: 49
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTAL GROWTH
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MATERIALS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THIN FILM STORAGE DEVICES
TRANSISTORS
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTAL GROWTH
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MATERIALS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THIN FILM STORAGE DEVICES
TRANSISTORS