skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Orientational superlattices formed by CuPt-ordered zinc-blende semiconductor alloys

Journal Article · · Physical Review, B: Condensed Matter
;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We performed a systematic study on a nonconventional semiconductor heterostructure{emdash}{ital orientational superlattices} (OSL{close_quote}s){emdash}based on CuPt-ordered zinc-blende alloys. Instead of the band offset in conventional superlattices, it is the discontinuity in the angular momentum which brings about the superlattice effects in orientational superlattices. Valence-band structures of five polytypes of OSL{close_quote}s formed by CuPt-ordered GaInP{sub 2} layers have been classified according to their symmetries and calculated numerically by using the envelope-function approximation for structures with different periods, ratios of layer thickness, and degree of order. On one hand, features similar to those in conventional superlattices{emdash}wave-function modulation, band-gap modification, and the formation of subbands and minigaps{emdash}can be achieved purely from an orientational alternation of the semiconductor layers. On the other hand, the dependence of energy levels on layer thickness and the wave-function distributions in OSL{close_quote}s are distinct from that in conventional superlattices. {copyright} {ital 1997} {ital The American Physical Society}

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
DOE Contract Number:
AC36-83CH10093
OSTI ID:
503703
Journal Information:
Physical Review, B: Condensed Matter, Vol. 55, Issue 19; Other Information: PBD: May 1997
Country of Publication:
United States
Language:
English

Similar Records

Theory of surface and interface transverse elastic waves in {ital N}-layer superlattices
Journal Article · Fri Nov 01 00:00:00 EST 1996 · Physical Review, B: Condensed Matter · OSTI ID:503703

Effects of strain-induced electric fields on the electronic structure of (111) growth axis semiconductor superlattices
Journal Article · Tue Jul 01 00:00:00 EDT 1986 · J. Vac. Sci. Technol., B; (United States) · OSTI ID:503703

Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices. [In(As,Sb); In(As,P)]
Conference · Thu Jul 01 00:00:00 EDT 1999 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena · OSTI ID:503703