Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, 420 Zhong Shan Bei Yi Road, Shanghai 200083, Peoples Republic of (China)
- AEA Technology, 552 Harwell, Didcot, Oxfordshire OX11 0RA (United Kingdom)
- MPI fur Festkorperforschung, D-70569 Stuttgart (Germany)
Boron-doped diamond film sample has been grown on (100) silicon substrate using the microwave enhanced chemical vapor deposition method. It is found that the sample has very good material qualities and an excellent (100) surface morphology. Au/diamond Schottky was fabricated on the (100) surface to study electron affinity of the diamond sample. By measuring frequency dependence capacitance{endash}voltage spectroscopy of the Schottky sample in high vacuum and at room temperature, a very small electron affinity of about 0.025 eV and a work function of about 5.165 eV have been obtained for the (100) surface of the diamond sample supposing the diamond band gap energy is 5.5 eV. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 503573
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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