Novel InGaAsN pn Junction for High-Efficiency Multiple-Junction Solar Cells

Conference · Fri Mar 26 04:00:00 EST 1999

OSTI ID:5031

Allerman, A A ^[1]; Chang, P C; Gee, J M; Hammons, B E; Hou, H Q; Jones, E D; Kurtz, S R; Reinhardt, K C

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1. Sandia National Laboratories

We report the application of a novel material, InGaAsN, with bandgap energy of 1.05 eV as a junction in an InGaP/GaAs/InGaAsN/Ge 4-junction design. Results of the growth and structural, optical, and electrical properties were demonstrated, showing the promising perspective of this material for ultra high efficiency solar cells. Photovoltaic properties of an as-grown pn diode structure and improvement through post growth annealing were also discussed.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 5031
• Report Number(s): SAND99-0437C
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ANNEALING
DESIGN
EFFICIENCY
ELECTRICAL PROPERTIES
ENERGY CONVERSION
SOLAR CELLS