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Title: Evidence of p/n homojunction formation in Zn/sub 3/P/sub 2/

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.91786· OSTI ID:5029133

Heating of magnesium/p-Zn/sub 3/P/sub 2/ contacts at 100 /sup 0/C results in a approx. 10/sup 2/ lower reverse saturation current than found for the unheated metal-semiconductor diode. Spectral response and electron-beam-induced current (EBIC) measurements show the formation of a buried junction upon heating, and the latter method has been used to obtain values of junction depth and minority carrier diffusion length. A model expressing the collection efficiency of an n-on-p homojunction shows good agreement with experiment when the minority carrier diffusion lengths and junction depth determined by EBIC measurements are used. This is the first evidence that p/n homojunctions may be formed in Zn/sub 3/P/sub 2/.

Research Organization:
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19711
OSTI ID:
5029133
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 37:6
Country of Publication:
United States
Language:
English