Electronic and atomic structure of thin CoSi sub 2 films on Si(111) and Si(100)

Journal Article · Wed Jan 15 00:00:00 EST 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.45.1193· OSTI ID:5026968

Chambliss, D D; Rhodin, T N ^[1]; Rowe, J E ^[2]

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1. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
2. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)

The electronic and atomic structure of very thin epitaxial cobalt silicide films was studied to provide insight into the initial stages of interface formation. Thin CoSi{sub 2} films (3--30 A) on Si(111) and Si(100) were studied experimentally using angle-resolved photoemission spectroscopy, low-energy electron diffraction (LEED), and Auger electron spectroscopy, and computationally using the pseudofunction method of Kasowski for determining the electronic band structure. The experimental and computational results support the models of Hellman and Tung for Co-rich and Si-rich CoSi{sub 2}(111) surfaces. The surface-state dispersion that we measure for the Co-rich variant agrees with the behavior that we calculate for the Hellman-Tung model. For the Si-rich variant, the essentially bulklike bonding environment of the outermost Co atoms in the Hellman-Tung model agrees with the photoemission results. Preliminary results for thin films of CoSi{sub 2} on Si(100) grown by a template technique show clearly a strong dependence of film quality on the annealing temperature and initial Co thickness. A model for surface structure is suggested that accounts for LEED and photoemission results.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5026968
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 45:3; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COBALT SILICIDES
ELECTRONIC STRUCTURE
INTERFACES
SILICON
ANNEALING
AUGER EFFECT
CHEMISORPTION
COBALT
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
EPITAXY
PHOTOEMISSION
THIN FILMS
CHEMICAL REACTIONS
COBALT COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
EMISSION
FILMS
HEAT TREATMENTS
METALS
SCATTERING
SECONDARY EMISSION
SEMIMETALS
SEPARATION PROCESSES
SILICIDES
SILICON COMPOUNDS
SORPTION
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360602* - Other Materials- Structure & Phase Studies
665000 - Physics of Condensed Matter- (1992-)