Radiation effects on MSI/LSI electronic devices and circuits. Final contract report
Transient radiation effects was investigated on bipolar and MOS MSI/LSI devices as well as basic thin-film devices. The transient susceptibility of the junction-isolated bipolar and MOS devices was due primarily to the substrate junction photocurrent. Transient failure levels were generally in the range of 10 to the 8th power to 10 to the 9th power rads(Si)/s for the bipolar devices, and on the order of 1-10 rads(Si) for the dose-dependent MOS devices. Failure level of the hardened bipolar MSI device was approximately 3 x 10 to the 8th power rads(Si)/s. No electrical performance degradation, latch-up or burn-out was observed on any device through exposure to a narrow-pulse 10 to the 11th power rads(Si)/s (2900 rads(Si)) ionizing radiation environment.
- Research Organization:
- Northrop Corporate Labs., Hawthorne, CA (USA)
- OSTI ID:
- 5010199
- Report Number(s):
- AD-886479
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DAMAGE
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSIENTS