Metal plasma immersion ion implantation and deposition using vacuum arc plasma sources
- Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
Plasma source ion implantation (PSII) with metal plasma results in a qualitatively different kind of surface modification than with gaseous plasma due to the condensable nature of the metal plasma, and a new, PSII-related technique can be defined: metal plasma immersion ion implantation and deposition (MPI). Tailored, high-quality films of any solid metal, metal alloy, or carbon (amorphous diamond) can be formed by MPI using filtered vacuum arc plasma sources, and compounds such as oxides or nitrides can be formed by adding a gas flow to the deposition. Here we describe the plasma formation at cathode spots, macroparticle filtering of the vacuum arc plasma by magnetic ducts, the underlying physics of MPI, and present some examples of MPI applications.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5000845
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:2; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
Similar Records
Metal plasma immersion ion implantation and deposition: A review
New developments in metal ion implantation by vacuum arc ion sources and metal plasma immersion
Related Subjects
47 OTHER INSTRUMENTATION
665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
CARBON
CHALCOGENIDES
COATINGS
ELEMENTS
ENERGY BEAM DEPOSITION FILMS
FILMS
ION IMPLANTATION
METALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PLASMA
PNICTIDES
SURFACE TREATMENTS