SmCo based sputtered films with CaCu{sub 5} and TbCu{sub 7} structures
- MARTECH, Florida State University, Tallahassee, Florida 32306 and Physics Department, Queens College of CUNY, Flushing, New York 11367 (United States)
- Physics Department, Queens College of CUNY, Flushing, New York 11367 (United States)
- MARTECH and Physics Department, Florida State University, Tallahassee, Florida 32306 (United States)
SmCo based films containing 20 at.{percent} Fe and with Sm varying from 15.5 to 17 at.{percent} have been synthesized to show the transition from ordered CaCu{sub 5} to disordered TbCu{sub 7} phase. For either phase, the demagnetization energy present during deposition can result in films with the crystallite c axes randomly splayed onto the film plane. It has been possible to synthesize the high anisotropy CaCu{sub 5} phase with either a (200) or (110) texture by adjusting the sputtering parameters to correspond to either a relatively high or relatively low surface mobility during the film deposition. It has been possible to synthesize ordered CaCu{sub 5} type films with very low values of B{sub R}({perpendicular})/B{sub R}({parallel})=0.042. Previously, SmCo based single phase TbCu{sub 7} structure films have been synthesized with close to the usual high energy product 2{endash}17 compositions of nominally 7 at.{percent} Cu and 2 at.{percent} Zr. The films have been characterized by vibrating-sample magnetometer and superconducting quantum interference device magnetometry, x-ray diffraction, and scanning electron microscope measurements for composition and film morphology. The films have been directly crystallized onto heated substrates so that the crystallite c axes are predominantly randomly aligned in the film plane. The crystal structures observed could be switched from the ordered CaCu{sub 5} to the disordered TbCu{sub 7} phase for small variations in the Sm concentrations. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 496612
- Report Number(s):
- CONF-961141--
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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