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SmCo based sputtered films with CaCu{sub 5} and TbCu{sub 7} structures

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.364624· OSTI ID:496612
;  [1];  [2]; ;  [3]
  1. MARTECH, Florida State University, Tallahassee, Florida 32306 and Physics Department, Queens College of CUNY, Flushing, New York 11367 (United States)
  2. Physics Department, Queens College of CUNY, Flushing, New York 11367 (United States)
  3. MARTECH and Physics Department, Florida State University, Tallahassee, Florida 32306 (United States)
SmCo based films containing 20 at.{percent} Fe and with Sm varying from 15.5 to 17 at.{percent} have been synthesized to show the transition from ordered CaCu{sub 5} to disordered TbCu{sub 7} phase. For either phase, the demagnetization energy present during deposition can result in films with the crystallite c axes randomly splayed onto the film plane. It has been possible to synthesize the high anisotropy CaCu{sub 5} phase with either a (200) or (110) texture by adjusting the sputtering parameters to correspond to either a relatively high or relatively low surface mobility during the film deposition. It has been possible to synthesize ordered CaCu{sub 5} type films with very low values of B{sub R}({perpendicular})/B{sub R}({parallel})=0.042. Previously, SmCo based single phase TbCu{sub 7} structure films have been synthesized with close to the usual high energy product 2{endash}17 compositions of nominally 7 at.{percent} Cu and 2 at.{percent} Zr. The films have been characterized by vibrating-sample magnetometer and superconducting quantum interference device magnetometry, x-ray diffraction, and scanning electron microscope measurements for composition and film morphology. The films have been directly crystallized onto heated substrates so that the crystallite c axes are predominantly randomly aligned in the film plane. The crystal structures observed could be switched from the ordered CaCu{sub 5} to the disordered TbCu{sub 7} phase for small variations in the Sm concentrations. {copyright} {ital 1997 American Institute of Physics.}
OSTI ID:
496612
Report Number(s):
CONF-961141--
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English