Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

Journal Article · Thu May 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119000· OSTI ID:496367

Lawniczak-Jablonska, K ^[1]; Suski, T ^[1]; Liliental-Weber, Z; Gullikson, E M; Underwood, J H; Perera, R C ^[1]; Drummond, T J ^[2]

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1. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)

The energy distribution of the nitrogen antibonding electron states in the hexagonal epitaxial layers of AlN, GaN, and InN and cubic epitaxial layers of GaN and InN along p{sub xy} plane and p{sub z} direction is reported. The study was performed by the polarized x-ray absorption at the K edge of N. A strong polarization dependence of the absorption spectra indicating the significant anisotropy of the conduction band was found in the case of hexagonal samples. Very weak polarization dependencies observed in cubic samples correspond well with the defect distribution anisotropy. Qualitatively different and cation dependent antibonding states distribution point out the role played by a contribution of hybridized cation-nitrogen electronic states to the individual conduction band structures of AlN, GaN, and InN. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 496367
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ABSORPTION SPECTRA
ADVANCED LIGHT SOURCE
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
ELECTRONIC STRUCTURE
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HYBRIDIZATION
INDIUM COMPOUNDS
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
POLARIZATION
X-RAY SPECTRA