Dramatic effect of postoxidation annealing on (100) Si/SiO{sub 2} roughness

Journal Article · Fri Feb 28 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118562· OSTI ID:495847

Chen, X; Gibson, J M ^[1]

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1. Department of Physics, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801 (United States)

We use a plan-view transmission electron microscope technique to unambiguously image the {open_quotes}physical{close_quotes} interface position between Si and furnace grown SiO{sub 2} layers. As-grown {approximately}6-nm-thick (100) oxides have a very high roughness ({sigma}{approximately}10{endash}15 {Angstrom}), which can be removed by short annealing in an inert gas at a growth temperature of 900{degree}C. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 495847
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
INTERFACES
OXIDATION
ROUGHNESS
SILICON
SILICON OXIDES
TRANSMISSION ELECTRON MICROSCOPY