Effect of postoxidation annealing on Si/SiO{sub 2} interface roughness
Journal Article
·
· Journal of the Electrochemical Society
The authors use a plan-view transmission electron microscope technique to unambiguously image the physical interface position between Si and furnace grown SiO{sub 2} layers. The effect of postoxidation annealing on the interface roughness of Si/SiO{sub 2} was studied with this technique. While no obvious effect due to postoxidation annealing on roughness was observed for silicon (111) a postoxidation annealing at 900 C dramatically removed roughness at Si(100)/SiO{sub 2} interfaces. A model was developed to explain the experimental results based on the idea of kinetic smoothening and oxidation induced roughening. Qualitative agreement has been reached.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy
- DOE Contract Number:
- FG02-91ER45439; W-31109-ENG-38
- OSTI ID:
- 20000098
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 8 Vol. 146; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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