Behavior of silicon drift detectors in large magnetic fields

Technical Report · Tue Dec 31 04:00:00 EST 1996

OSTI ID:495812

Pandey, S U; Bellwied, R ^[1]; Beuttenmueller, R ^[2]

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1. Ohio State Univ., Columbus, OH (United States)
2. Wayne State Univ., Detroit, MI (United States); and others

A 45 x 45 mm rectangular n-type Silicon Drift Detector was studied in magnetic fields ranging from 0 to 4.7 T and for drift fields from 200 to 380 V/cm. Transport properties of electrons in silicon (Hall mobility, drift mobility and magnetoresistance) were determined by pulsing the detector with a Nd:Yag laser at different drift lengths and measuring both the transverse deflections of the signal and the increases in rift time versus an applied magnetic field. The width of the signal in both the drift and anode direction increased with magnetic field. The magnetic field was aligned parallel and normal to the drift direction. The detector was found to operate well for conditions expected in future experiments at the RHIC collider and experiment E896 at Brookhaven National Laboratory.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Welch (Robert A.) Foundation, Houston, TX (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 495812
• Report Number(s): BNL--64331; CONF-961123--18; ON: DE97006738; CNN: Grant NSF PHY-9511850
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
BROOKHAVEN RHIC
CHARGED PARTICLE DETECTION
CHARGED-PARTICLE TRANSPORT
EXPERIMENTAL DATA
PARTICLE TRACKS
SI SEMICONDUCTOR DETECTORS