Highly oriented ferroelectric CaBi{sub 2}Nb{sub 2}O{sub 9} thin films deposited on Si(100) by pulsed laser deposition

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118587· OSTI ID:495255

Desu, S B; Cho, H S; Joshi, P C ^[1]

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1. Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237 (United States)

We report the successful deposition of highly c-axis oriented CaBi{sub 2}Nb{sub 2}O{sub 9} (CBN) thin films directly on p-type Si(100) substrates by pulsed laser deposition. The CBN thin films exhibited good structural, dielectric, and CBN/Si interface characteristics. The electrical measurements were conducted on CBN thin films in a metal{endash}ferroelectric{endash}semiconductor (MFS) capacitor configuration. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 80 and 0.051, respectively. The leakage current of the MFS capacitor structure was governed by the Schottky barrier conduction mechanism and the leakage current density was lower than 10{sup {minus}7}A/cm{sup 2} at an applied electric field of 100 kV/cm. The capacitance{endash}voltage measurements on MFS capacitors established good ferroelectric polarization switching characteristics. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 495255
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
CALCIUM OXIDES
CAPACITORS
CRYSTAL STRUCTURE
DEPOSITION
DIELECTRIC PROPERTIES
FERROELECTRIC MATERIALS
INTERFACES
LEAKAGE CURRENT
LOSSES
NIOBIUM OXIDES
PERMITTIVITY
POLARIZATION
SCHOTTKY BARRIER DIODES
THIN FILMS