Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al{sub 2}O{sub 3}/Al cathode
- Ames Laboratory--USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
- Ames Laboratory--USDOE, Iowa State University, Ames, Iowa 50011 (United States)
The effects of a controlled Al{sub 2}O{sub 3} buffer layer on the behavior of highly efficient vacuum evaporated aqua regia-treated indium tin oxide (ITO)/triphenyl diamine (TPD)/8-tris-hydroxyquino-line aluminum Alq{sub 3}/Al{sub 2}O{sub 3}/Al light-emitting diodes are described. It is found that, with a buffer layer of suitable thickness, both current injection and electroluminescence output are significantly enhanced. The enhancement is believed to be due to increased charge carrier density near the TPD/Alq{sub 3} interface that results from enhanced electron tunneling, and removal of exciton-quenching gap states that are intrinsic to the Alq{sub 3}/Al interface. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 495229
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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