Simulation of mixed-host emitting layer based organic light emitting diodes

Journal Article · Fri Apr 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915197· OSTI ID:22391530

Riku, C.; Kee, Y. Y.; Ong, T. S.; Tou, T. Y. ^[1]; Yap, S. S. ^[2]

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1. Faculty of Engineering, Multimedia University, 631000 Cyberjaya (Malaysia)
2. Faculty of Engineering, University of Malaya, 50603 Kuala Lampur (Malaysia)

‘SimOLED’ simulator is used in this work to investigate the efficiency of the mixed-host organic light emitting devices (MH-OLEDs). Tris-(8-hydroxyquinoline) aluminum(3) (Alq{sub 3}) and N,N-diphenyl-N,N-Bis(3-methylphenyl)-1,1-diphenyl-4,4-diamine (TPD) are used as the electron transport layer (ETL) material and hole transport layer (HTL) material respectively, and the indium-doped tin oxide (ITO) and aluminum (Al) as anode and cathode. Three MH-OLEDs, A, B and C with the same structure of ITO / HTM (15 nm) / Mixed host (70 nm) / ETM (10 nm) /Al, are stimulated with ratios TPD:Alq{sub 3} of 3:5, 5:5, and 5:3 respectively. The Poole-Frenkel model for electron and hole mobilities is employed to compute the current density-applied voltage-luminance characteristics, distribution of the electric field, carrier concentrations and recombination rate.

• OSTI ID: 22391530
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1657; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM COMPOUNDS
ANODES
CATHODES
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
CURRENT DENSITY
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON MOBILITY
ELECTRONS
HOLE MOBILITY
INDIUM COMPOUNDS
LAYERS
LIGHT EMITTING DIODES
OXINE
RECOMBINATION
SIMULATORS
TIN OXIDES