Photocurrents induced by a radiation impulse in semiconductor devices (in French)
Thesis. The fundamental mechanisms involved in the transient effects induced in semiconductors by radiation were studied in view of hardening of electronic systems. The following techniques for electrically testing and stimulating transient effects are described:neodymium switched lasers, GaAs diode lasers, proton pulses from pulsed Van de Graaff machines, electron pulses from a Bevatron, and pulses from gamma-ray generators. The primary photocurrent from the base-collector junction is an important parameter. Calculation methods were developed for low levels of generation (small dose rates). The application of relations obtained for the primary photocurrents to calculations of the overall response of bipolar transistors (secondary photocurrents, storage time when exposed to radiations) is envisaged, the way in which the photocurrents can be included in the large signal models used in the CAO programs for analyzing the circuits being described. For the case corresponding to a high level of generations, a complete analysis of the phenomena is given. 1n particular, two structures are studied: a thin N/sup +/NP/sup +/ epitaxial junction and a P/sup +/ N junction. The problem of anomalous photocurrents in epitaxial devices was also studied. (FR)
- Sponsoring Organization:
- Sponsor not identified
- NSA Number:
- NSA-29-002795
- OSTI ID:
- 4933178
- Report Number(s):
- LYCEN--7322
- Country of Publication:
- France
- Language:
- French
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Related Subjects
ELECTRON BEAMS
GAMMA RADIATION
JUNCTION TRANSISTORS
LASER RADIATION
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
PHOTOCONDUCTIVITY
PHOTON BEAMS
PHYSICAL RADIATION EFFECTS
PROTON BEAMS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SIMULATION
TRANSIENTS