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Title: Microstructure of ruthenium dioxide films grown on {alpha}{endash}Al{sub 2}O{sub 3} (0001), {alpha}{endash}Al{sub 2}O{sub 3} (1{bar 1}02), and SrTiO{sub 3} (100) using reactive sputtering

Journal Article · · Journal of Materials Research
; ; ; ; ;  [1];  [2]
  1. Departments of Chemistry and Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
  2. Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 40439 (United States)

A quantitative study was made of the composition and microstructure of RuO{sub 2} films deposited on three different substrates using reactive sputtering. Most of the films had a composition within 2.5 wt.{percent} of the correct stoichiometry; the only exceptions were films grown on Al{sub 2}O{sub 3}(0001) at 150{degree}C, which had an oxygen-to-ruthenium ratio of 1:2.24. The excess oxygen was attributed to a thin oxygen-rich layer that encapsulated the grains. Hydrogen concentrations for the films deposited on Al{sub 2}O{sub 3}(0001) were 14, 6, 6, and {lt}0.5 at.{percent} for room, 150, 300, and 450{degree}C growth temperatures respectively. The films deposited at room temperature were amorphous on Al{sub 2}O{sub 3}(0001) and SrTiO{sub 3}(100), but weakly crystalline on Al{sub 2}O{sub 3}(1{bar 1}02). Highly oriented RuO{sub 2}(100) films were produced on Al{sub 2}O{sub 3}(0001) at deposition temperatures {ge}150{degree}C. The in-plane alignment was [010]{sub RuO{sub 2}}//{l_angle}{bar 2}110{r_angle}{sub Al{sub 2}O{sub 3}} and a threefold mosaic microstructure was observed. The grain boundaries in these films were discontinuous until the substrate temperature was raised to 450{degree}C, where coherent grain boundaries were formed. The films grown on Al{sub 2}O{sub 3}(1{bar 1}02) at 450{degree}C exhibited the epitaxial relationship: RuO{sub 2}(101)//Al{sub 2}O{sub 3}(1{bar 1}02). The in-plane alignment was RuO{sub 2}{l_angle}101{r_angle}//Al{sub 2}O{sub 3}{l_angle}{bar 1}101{r_angle}, and the lattice parameters were the same as found in bulk RuO{sub 2}. Transmission electron microscopy indicated a large degree of imperfection in the region between coalescing grains. The RuO{sub 2} films grown on SrTiO{sub 3}(100) at room temperature were amorphous. The film grown at 450{degree}C showed a preferential orientation with RuO{sub 2}(100)//SrTiO{sub 3}(100), but without in-plane orientation. {copyright} {ital 1997 Materials Research Society.}

OSTI ID:
491633
Journal Information:
Journal of Materials Research, Vol. 12, Issue 4; Other Information: PBD: Apr 1997
Country of Publication:
United States
Language:
English