Conductive LaNiO{sub 3} electrode grown by pulsed laser ablation on Si substrate

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1997.0133· OSTI ID:491632

Sun, L; Yu, T ^[1]; Chen, Y ^[2]; Zhou, J ^[3]; Ming, N ^[1]

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1. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People`s Republic of (China)
2. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People`s Republic of (China)
3. Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People`s Republic of (China)

Using the pulsed laser ablation (PLA) technique, conductive LaNiO{sub 3} thin films have been successfully grown on the (001) Si substrates. The XRD {theta}-2{theta} scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO{sub 3} films display a metallic character. Polycrystalline PbTiO{sub 3} films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO{sub 3} electrodes. Ferroelectricity measurements of the PbTiO{sub 3}/LaNiO{sub 3} heterostructure prove LaNiO{sub 3} to be a promising electrode material in the integration of ferroelectrics and Si wafer. {copyright} {ital 1997 Materials Research Society.}

• OSTI ID: 491632
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 4 Vol. 12; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITORS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRODES
LANTHANUM OXIDES
LASER RADIATION
LEAD OXIDES
NICKEL OXIDES
TEXTURE
THIN FILMS
TITANIUM OXIDES