Pulsed laser deposition and crystallization of transparent conducting thin films
Book
·
OSTI ID:490843
- Zhengzhou Univ., Henan (China)
Transparent conducting thin films of approximately 1,000--2,000 {angstrom} were deposited on glass, quartz and silicon substrates using standard pulsed laser deposition techniques with two different targets (Sn and SnO{sub 2}) and with three different laser wavelengths (1.06, 0.532 and 0.266 {micro}m) from a Q-switched Nd:YAG laser. Composite films of SnO{sub 2} and Sn with high optical transmission were obtained using a Sn target and a background oxygen pressure of 20 Pa with optical transmission over most of the visible spectrum exceeding 80%. Electrical resistivities of approximately 10{sup {minus}2} {Omega}-cm were obtained. Using SnO{sub 2} targets, predominantly amorphous phase SnO{sub 2} films were deposited on Si substrates and then transformed into polycrystalline Sn{sub 3}O{sub 4} by laser induced crystallization ({lambda} = 1.06 {micro}m). The electrical resistivity of these films was also permanently reduced by a factor greater than 1,000.
- Sponsoring Organization:
- National Natural Science Foundation of China, Beijing, BJ (China)
- OSTI ID:
- 490843
- Report Number(s):
- CONF-951155--; ISBN 1-55899-300-2
- Country of Publication:
- United States
- Language:
- English
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