Highly conductive and optically transparent polycrystalline iridium oxide thin films grown by reactive pulsed laser deposition

Conference · Tue Jul 01 04:00:00 EDT 1997

OSTI ID:20015566

El Khakani, M A; Chaker, M

Reactive pulsed laser deposition has been used to deposit IrO{sub 2} thin films on both SiO{sub 2} and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 x 10{sup 9} W/cm{sup 2}, IrO{sub 2} films were deposited at substrate deposition temperatures ranging from room-temperature to 700 C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (T{sub d}). High quality IrO{sub 2} films are obtained in the 400--600 C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a T{sub d} as low as 400 C, highly conductive IrO{sub 2} films with room-temperature resistivities as low as (42 {+-} 6) {micro}{Omega} cm are obtained. Over the 300--600 C T{sub d} range, the IrO{sub 2} films were found to exhibit a maximum optical transmission at 450 C ({approximately}45% at 500 nm for 80 nm-thick films).

• Research Organization: INRS, Varennes, Quebec (CA)
• Sponsoring Organization: Natural Sciences and Engineering Research Council of Canada
• OSTI ID: 20015566
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
IRIDIUM OXIDES
LASERS
LIGHT TRANSMISSION
MORPHOLOGY
THIN FILMS