Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

Journal Article · Mon May 23 04:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947913· OSTI ID:22608686

Joshi, U. S. ^[1]

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1. Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

• OSTI ID: 22608686
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1731; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
CARRIER DENSITY
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
GALLIUM OXIDES
GLASS
INDIUM OXIDES
LASER RADIATION
OPACITY
OPTICAL PROPERTIES
PULSED IRRADIATION
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSMISSION
VISIBLE RADIATION
ZINC OXIDES